? semiconductor components industries, llc, 2002 may, 2002 rev. 1 1 publication order number: mjd148/d mjd148 preferred device npn silicon power transistor dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. ? lead formed for surface mount applications in plastic sleeves (no suffix) ? lead formed version available in 16 mm tape and reel (at4o suffix) ? high gain e 50 min @ i c = 2.0 amps ? low saturation voltage e 0.5 v @ i c = 2.0 amps ? high current gainbandwidth product e f t = 3.0 mhz min @ i c = 250 madc ???????????????????? ???????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ???? ???? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 45 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ???? ???? 45 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ???? ???? 5 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous peak ???? ? ?? ? ???? i c ???? ? ?? ? ???? 4 7 ??? ? ? ? ??? adc ???????????? ???????????? base current ???? ???? i b ???? ???? 50 ??? ??? madc ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? p d ???? ???? 20 0.16 ??? ??? watts w/ c ???????????? ? ?????????? ? ? ?????????? ? ???????????? total power dissipation (note 1) @ t a = 25 c derate above 25 c ???? ? ?? ? ? ?? ? ???? p d ???? ? ?? ? ? ?? ? ???? 1.75 0.014 ??? ? ? ? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? 55 to +150 ??? ? ? ? ??? c ???????????????????? ???????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ???? ???? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? r jc ???? ???? 6.25 ??? ??? c/w ???????????? ? ?????????? ? ???????????? thermal resistance, junction to ambient (note 1) ???? ? ?? ? ???? r ja ???? ? ?? ? ???? 71.4 ??? ? ? ? ??? c/w 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. 2 amperes 1000 volts 50 watts power transistor marking diagrams y = year ww = work week mjd18002 = device code device package shipping ordering information mjd1482 dpak 3000/tape & reel dpak case 369a style 1 yww mjd 148 http://onsemi.com
mjd148 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ???????????? ? ?????????? ? ???????????? characteristic ???????????? ? ?????????? ? ???????????? test conditions ???? ? ?? ? ???? symbol ??? ? ? ? ??? min ???? ? ?? ? ???? max ??? ? ? ? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ???????????? ???????????? collectoremitter sustaining voltage (note 2) ???????????? ???????????? i c = 100 madc, i b = 0 ???? ???? v ceo(sus) ??? ??? 45 ???? ???? ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector cutoff current ???????????? ? ?????????? ? ???????????? v cb = 45 vdc, i e = 0 ???? ? ?? ? ???? i cbo ??? ? ? ? ??? ???? ? ?? ? ???? 20 ??? ? ? ? ??? adc ???????????? ???????????? emitter cutoff current ???????????? ???????????? v be = 5 vdc, i c = 0 ???? ???? i ebo ??? ??? ???? ???? 1 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ???????????? ? ?????????? ? ? ?????????? ? ? ?????????? ? ???????????? dc current gain (note 2) ???????????? ? ?????????? ? ? ?????????? ? ? ?????????? ? ???????????? i c = 10 madc, v ce = 5 vdc i c = 0.5 adc, v ce = 1 vdc i c = 2 adc, v ce = 1 vdc i c = 3 adc, v ce = 1 vdc ???? ? ?? ? ? ?? ? ? ?? ? ???? h fe ??? ? ? ? ? ? ? ? ? ? ??? 40 85 50 30 ???? ? ?? ? ? ?? ? ? ?? ? ???? 375 ??? ? ? ? ? ? ? ? ? ? ??? ???????????? ???????????? collectoremitter saturation voltage (note 2) ???????????? ???????????? i c = 2 adc, i b = 0.2 adc ???? ???? v ce(sat) ??? ??? ???? ???? 0.5 ??? ??? vdc ???????????? ???????????? baseemitter on voltage (note 2) ???????????? ???????????? i c = 2 adc, v ce = 1 vdc ???? ???? v be(on) ??? ??? ???? ???? 1.1 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????? ? ?????????? ? ???????????? currentgainbandwidth product ???????????? ? ?????????? ? ???????????? i c = 250 madc, v ce = 1 vdc, f = 1 mhz ???? ? ?? ? ???? f t ??? ? ? ? ??? 3 ???? ? ?? ? ???? ??? ? ? ? ??? mhz 2. pulse test: pulse width 300 s, duty cycle 2%.
mjd148 http://onsemi.com 3 v ce , collectoremitter voltage (volts) figure 1. dc current gain i c , collector current (amp) 10 0.1 0.004 3 1 0.5 0.01 0.1 0.2 0.3 0.5 1 2 3 4 5 2 0.3 0.2 0.007 0.02 0.05 0.03 h fe , dc current gain (normalized) t j = 150 c = 25 c v ce = 2 v v ce = 10 v 55 c figure 2. collector saturation region i b , base current (ma) 2 0 0.05 1.6 1.2 0.1 1 2 3 5 10 20 30 500 0.8 0.4 0.07 0.2 0.5 0.3 t j = 25 c i c = 10 ma 0.7 7 50 70 100 200 300 100 ma 1 a 3 a typical characteristics
mjd148 http://onsemi.com 4 , collector current ( a) m i c v , temperature coefficients (mv/ c) q 2 0.005 figure 3. aono voltages i c , collector current (amp) 0 0.01 0.020.030.05 0.1 0.5 1 4 0.8 figure 4. temperature coefficients +2.5 i c , collector current (amp) 1.6 1.2 voltage (volts) 0.4 0.20.3 10 3 0.4 figure 5. collector cutoff region v be , baseemitter voltage (volts) 10 1 10 3 10 2 10 0 10 1 10 2 23 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2 v 0.005 0.01 0.020.030.05 0.1 0.5 1 4 0.20.3 2 3 +2 +1.5 +1 0 0.5 1 1.5 2 +0.5 2.5 *applies for i c /i b h fe /2 * t j = 65 c to +150 c * v for v ce(sat) v for v be 0.3 0.2 0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 reverse forward t j = 150 c v ce = 30 v 100 c 25 c i ces figure 6. thermal response t, time (ms) 1 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.05 1 2 5 10 20 50 100 200 1 k 500 z jc(t) = r(t) r qjc r qjc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) z qjc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 0.1 0.5 0.2
mjd148 http://onsemi.com 5 10 1 figure 7. maximum rated forward bias v ce , collectoremitter voltage (volts) 5 3 2 0.5 0.01 510 bonding wire limit thermal limit second breakdown limit i c , collector current (amps) dc 500 s 0.3 0.05 23 1ms 20 30 50 70 1 0.2 7 0.1 0.03 0.02 t c = 25 c single pulse, d 0.1% t j = 150 c 5ms forward bias safe operating area information there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 7 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 6. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd148 http://onsemi.com 6 package dimensions case 369a13 issue ab dpak style 1: pin 1. base 2. collector 3. emitter 4. collector d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 minimum pad sizes recommended for surface mounted applications 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826 inches mm
mjd148 http://onsemi.com 7 notes
mjd148 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjd148/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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